For a P-N junction diode, the built in barrier potential of the junction is __________ proportional to the doping concentration and _________ proportional to the intrinsic concentration

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RRB JE EE 22 Apr 2025 Shift 2 CBT 2 Official Paper
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  1. inversely; directly 
  2. inversely; inversely
  3. directly; inversely
  4. directly; directly

Answer (Detailed Solution Below)

Option 3 : directly; inversely
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Detailed Solution

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Concept

The built-in barrier potential of a pn junction diode is given by:

where, k = Boltzmann constant

T = Absolute temperature (in Kelvin)

q = Electron charge

NA =  Acceptor concentration

ND = Donor concentration

ni = Intrinsic carrier concentration

Explanation

From the above expression, for a P-N junction diode, the built-in barrier potential of the junction is:

  • Directly proportional to the doping concentrations (NA and ND)
  • Inversely proportional to the intrinsic carrier concentration (ni)


So, the built-in barrier potential of the junction is directly proportional to the doping concentration and inversely proportional to the intrinsic concentration.

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