Question
Download Solution PDFFor a P-N junction diode, the built in barrier potential of the junction is __________ proportional to the doping concentration and _________ proportional to the intrinsic concentration
Answer (Detailed Solution Below)
Detailed Solution
Download Solution PDFConcept
The built-in barrier potential of a pn junction diode is given by:
where, k = Boltzmann constant
T = Absolute temperature (in Kelvin)
q = Electron charge
NA = Acceptor concentration
ND = Donor concentration
ni = Intrinsic carrier concentration
Explanation
From the above expression, for a P-N junction diode, the built-in barrier potential of the junction is:
- Directly proportional to the doping concentrations (NA and ND)
- Inversely proportional to the intrinsic carrier concentration (ni)
So, the built-in barrier potential of the junction is directly proportional to the doping concentration and inversely proportional to the intrinsic concentration.
Last updated on Jun 16, 2025
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