In junction field effect transistor, the drain current can be approximated as:

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In junction field effect transistor, the drain current can be approximated as:

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\(\rm I_{DS}=\frac{I_{DSS}}{V_P}\left(1-\frac{V_{GS}}{2}\right)\)
\(\rm I_{DS}=I_{DSS}\left(1-\frac{V_{GS}}{V_P}\right)\)
\(\rm I_{DS}=I_{DSS}\left(1-\frac{V_{GS}}{V_P}\right)^{\frac{1}{2}}\)
\(\rm I_{DS}=I_{DSS}\left(1-\frac{V_{GS}}{V_P}\right)^2\)

Answer 1

Explanation:

A junction field effect transistor is a three-terminal semiconductor device in which current conduction is by majority types of carriers i.e., electrons or holes. JFET has high input impedance and low noise levels.

A JFET consists of a p-type or n-type silicon material, containing two p-n junctions at the sides. If the bar is n-type, it is called an n-channel JFET and if the bar is of p-type, it is called a p-channel JFET.

ID = IDSS\({[1- {V_{GS} \over Vp}]}^2\)

ID = drain current at given VGS

IDSS = short circuit gate-drain current

V_GS= gate-source voltage

\(Vp\) = gate-source cut-off voltage (or) pinch-off Voltage

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In junction field effect transistor, the drain current can be approximated as:

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