Source/Drain region's doping concentration value used for analysis and simulation of short-channel SOI MESFET is

Doping Concentration:

• The doping concentration in the source and drain regions of a short-channel SOI (Silicon-On-Insulator) MESFET (Metal Semiconductor Field Effect Transistor) can vary depending on the specific design, technology node, and intended performance characteristics.
• In general, these doping concentrations are often kept in the range of 10¹⁰ to 10²⁰ do pants per cubic centimeter (-3cm) in order to achieve the desired electrical properties and device performance.
• However, the exact values can differ significantly based on the fabrication process, target applications, and the MOSFET's characteristics required for optimal operation.
• The extra doping concentration can vary based on specific design requirements and technology nodes, but values around 10²⁰ cm^-3 are common for short-channel SOI MESFETs.

Here, option 2 is correct.