The power dissipation under constant field after scaling on MOS device characteristics is

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UPSC ESE (Prelims) Electronics and Telecommunication Engineering 19 Feb 2023 Official Paper
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  1. \(\frac{P}{S} \)
  2. \(\frac{2 P}{S^2} \)
  3. \(\frac{P}{S^2}\)
  4. \(\frac{P}{2 S^2} \)

Answer (Detailed Solution Below)

Option 1 : \(\frac{P}{S} \)
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Detailed Solution

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Power dissipation(P):

The power dissipation in a Metal-Oxide-Semiconductor (MOS) device under a constant electric field after scaling can be affected by various factors. When MOS devices are scaled down, several changes occur that can impact power dissipation.

Let's denote this scaling factor as s.

  • The power dissipation (P) in a MOS device is influenced by the product of voltage (V), current(I) and capacitance(C).
  • \(P = V \cdot I = C \cdot V^2 \cdot f\)
  • Here, f = switching frequency. When we scale the dimensions of the MOS device by a factor s, the capacitance (C) decrease by s, and the voltage (V) scales by s.
  • So, the new power dissipation (p') after scaling is:
  • P' = \(\frac{C}{s}\cdot(V\cdot s)^2\cdot f = {(C\cdot V^2\cdot f)}{s}\)
  • This means that after scaling, the power dissipation is reduced by the scaling factor (s), leading to \(\frac{P}{s}\).

Here, option 1 is correct.

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